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MJE5851G
MJE5851G
GP BJT MJE5851G
onsemi
MJE5851G
--
Diodes, Transistors and Thyristors
GP BJT
MJE5851G.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.83(Max)
Package Height9.28(Max)
Package Length10.53(Max)
Product CategoryBipolar Power
Supplier PackageTO-220AB
Standard Package NameTO-220
SVHC Exceeds ThresholdYes
Minimum DC Current Gain15@2A@5V|5@5A@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)80000
Maximum DC Collector Current (A)8
Maximum Emitter Base Voltage (V)6
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)350
Maximum Base Emitter Saturation Voltage (V)1.5@1A@4A
Maximum Collector-Emitter Saturation Voltage (V)2@1A@4A|5@3A@8A
Description
Trans GP BJT PNP 350V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube
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