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MPS6507
MPS6507
GP BJT MPS6507
onsemi
MPS6507
--
Diodes, Transistors and Thyristors
GP BJT
MPS6507.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.75
PPAPNo
SVHCYes
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.19(Max)
Package Height7.87(Max)
Package Length5.21(Max)
Product CategoryBipolar Small Signal
Supplier PackageTO-226
SVHC Exceeds ThresholdYes
Minimum DC Current Gain25@2mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)625
Maximum DC Collector Current (A)0.05
Maximum Emitter Base Voltage (V)3
Maximum Collector Base Voltage (V)30
Maximum Transition Frequency (MHz)800(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)20
Maximum Collector Cut-Off Current (nA)50
Description
Trans GP BJT NPN 20V 0.05A 625mW 3-Pin TO-226
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