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APT95GR65JDU60
APT95GR65JDU60
IGBT Chip APT95GR65JDU60
Microchip Technology
APT95GR65JDU60
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Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTube
AutomotiveNo
Part StatusObsolete
Channel TypeN
ConfigurationSingle Dual Emitter
Maximum Power Dissipation (mW)446
Maximum Gate Emitter Voltage (V)±30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)135
Maximum Gate Emitter Leakage Current (uA)0.25
Description
Trans IGBT Chip N-CH 650V 135A 446mW Tube
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