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FGA90N33ATDTU
FGA90N33ATDTU
IGBT Chip FGA90N33ATDTU
onsemi
FGA90N33ATDTU
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Diodes, Transistors and Thyristors
IGBT Chip
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusNRND
Channel TypeN
ConfigurationSingle
Package Width5(Max)
Package Height18.9(Max)
Package Length16.2(Max)
Supplier PackageTO-3P
Standard Package NameTO-3P
Maximum Power Dissipation (mW)223000
Maximum Gate Emitter Voltage (V)±30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)330
Maximum Continuous Collector Current (A)90
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.6
Description
Trans IGBT Chip N-CH 330V 90A 223000mW 3-Pin(3+Tab) TO-3P Tube
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