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STGW25H120DF
STGW25H120DF
IGBT Chip STGW25H120DF
STMicroelectronics
STGW25H120DF
--
Diodes, Transistors and Thyristors
IGBT Chip
STGW25H120DF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusUnconfirmed
Channel TypeN
ConfigurationSingle
Package Width5.15(Max)
Package Height20.15(Max)
Package Length15.75(Max)
Supplier PackageTO-247
Standard Package NameTO-247
SVHC Exceeds ThresholdYes
Maximum Power Dissipation (mW)313000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)50
Maximum Gate Emitter Leakage Current (uA)0.25
Typical Collector Emitter Saturation Voltage (V)2.15
Description
Trans IGBT Chip N-CH 1200V 50A 313000mW 3-Pin(3+Tab) TO-247 Tube
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