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BSM100GB60DLCHOSA1
BSM100GB60DLCHOSA1
IGBT Modules BSM100GB60DLCHOSA1
Infineon
BSM100GB60DLCHOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count7
AutomotiveNo
PCB changed7
Part StatusObsolete
Channel TypeN
ConfigurationDual
Package Width34
Package Length94
Supplier Package34MM-1
Maximum Power Dissipation (mW)445000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)600
Maximum Continuous Collector Current (A)130
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.95
Description
Trans IGBT Module N-CH 600V 130A 445000mW 7-Pin 34MM-1 Tray
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