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BSM75GB170DN2HOSA1
BSM75GB170DN2HOSA1
IGBT Modules BSM75GB170DN2HOSA1
Infineon
BSM75GB170DN2HOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTray
AutomotiveNo
Part StatusObsolete
Channel TypeN
ConfigurationDual
Maximum Power Dissipation (mW)625000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)110
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)3.4
Description
Trans IGBT Module N-CH 1700V 110A 625000mW Tray
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