Welcome to BEAM! Tel: +86-553-5896615
Language: Help
BSM75GB170DN2HOSA1
BSM75GB170DN2HOSA1
IGBT Modules BSM75GB170DN2HOSA1
Infineon
BSM75GB170DN2HOSA1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTray
AutomotiveNo
Part StatusObsolete
Channel TypeN
ConfigurationDual
Maximum Power Dissipation (mW)625000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)110
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)3.4
Description
Trans IGBT Module N-CH 1700V 110A 625000mW Tray
Related products
Inquiry Price
Email
Batch
Quantity
Expected delivery time
Expected price
$
Popular Products
Manufacturer: STMicroelectronics
Inventory: 0
$0.13815
Manufacturer: Microchip Technology
Inventory: 0
$0.69541
Manufacturer: Microchip Technology
Inventory: 0
$0.21974
Manufacturer: STMicroelectronics
Inventory: 0
$0.43568
Manufacturer: Texas Instruments
Inventory: 3000
$3.36776
Manufacturer: Texas Instruments
Inventory: 0
$0.02555
Manufacturer: Texas Instruments
Inventory: 3000
$1.31986
Manufacturer: Texas Instruments
Inventory: 6000
$1.0644
Manufacturer: STMicroelectronics
Inventory: 1920
$3.51252
Manufacturer: ADI
Inventory: 0
$1.40371