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FF1200R17KE3NOSA1
FF1200R17KE3NOSA1
IGBT Modules FF1200R17KE3NOSA1
Infineon
FF1200R17KE3NOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSNot Compliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count10
AutomotiveUnknown
PCB changed10
Part StatusNRND
Channel TypeN
ConfigurationDual
Package Width130
Package Height38
Package Length140
Supplier PackageIHM130-2
Maximum Power Dissipation (mW)5950000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)1600
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2
Description
Trans IGBT Module N-CH 1700V 1.6KA 5950000mW Automotive 10-Pin IHM130-2 Tray
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