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FF450R17ME4BOSA1
FF450R17ME4BOSA1
IGBT Modules FF450R17ME4BOSA1
Infineon
FF450R17ME4BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count11
AutomotiveNo
PCB changed11
Part StatusActive
Channel TypeN
ConfigurationDual
Package Width62
Package Height17
Package Length152
Supplier PackageECONOD-3
Standard Package NameAG-ECONOD-3
Maximum Power Dissipation (mW)2500
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)600
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.95
Description
Trans IGBT Module N-CH 1700V 600A 2500mW 11-Pin ECONOD-3 Tray
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