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VS-GB100NH120N
VS-GB100NH120N
IGBT Modules VS-GB100NH120N
Vishay
VS-GB100NH120N
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count5
AutomotiveNo
PCB changed5
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Supplier PackageDouble INT-A-PAK
Maximum Power Dissipation (mW)833000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)200
Maximum Gate Emitter Leakage Current (uA)0.4
Description
Trans IGBT Module N-CH 1200V 200A 833000mW 5-Pin Double INT-A-PAK
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