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FF650R17IE4DB2BOSA1
FF650R17IE4DB2BOSA1
IGBT Modules FF650R17IE4DB2BOSA1
Infineon
FF650R17IE4DB2BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count10
AutomotiveNo
PCB changed10
Part StatusActive
Channel TypeN
ConfigurationDual
Package Width89
Package Height37.7
Package Length172
Supplier PackagePRIME2-1
Maximum Power Dissipation (mW)4150000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1700
Maximum Continuous Collector Current (A)930
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)2
Description
Trans IGBT Module N-CH 1700V 930A 4150000mW 10-Pin PRIME2-1 Tray
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