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FS25R12W1T4
FS25R12W1T4
IGBT Modules FS25R12W1T4
Infineon
FS25R12W1T4
--
Diodes, Transistors and Thyristors
IGBT Modules
FS25R12W1T4.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count18
AutomotiveNo
PCB changed18
Part StatusUnconfirmed
Channel TypeN
ConfigurationHex
Package Width33.8
Package Height12
Package Length62.8
Supplier PackageEASY1B-1
Standard Package NameEASY1B
Maximum Power Dissipation (mW)205000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)45
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.85
Description
Trans IGBT Module N-CH 1200V 45A 205000mW 18-Pin EASY1B-1 Tray
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