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FR900R12IP4DBPSA1
FR900R12IP4DBPSA1
IGBT Modules FR900R12IP4DBPSA1
Infineon
FR900R12IP4DBPSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count14
TechnologyField Stop|Trench
PCB changed14
Part StatusActive
Channel TypeN
ConfigurationDual
Package Width89
Package Height38.25
Package Length250
Supplier PackageAG-PRIME3+
Supplier Temperature GradeIndustrial
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)900
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.7
Description
Trans IGBT Module N-CH 1200V 900A 14-Pin AG-PRIME3+ Tray
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