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FS600R07A2E3BOSA1
FS600R07A2E3BOSA1
IGBT Modules FS600R07A2E3BOSA1
Infineon
FS600R07A2E3BOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count33
AutomotiveYes
PCB changed33
Part StatusLTB
Channel TypeN
ConfigurationHex
Package Width100
Package Height28.5(Max)
Package Length216
Supplier PackageHYBRID2-1
Maximum Power Dissipation (mW)1250000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)530
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.3
Description
Trans IGBT Module N-CH 650V 530A 1250000mW Automotive 33-Pin HYBRID2-1 Tray
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