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FS75R12W2T4BOMA1
FS75R12W2T4BOMA1
IGBT Modules FS75R12W2T4BOMA1
Infineon
FS75R12W2T4BOMA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count35
AutomotiveNo
PCB changed35
Part StatusActive
Channel TypeN
ConfigurationHex
Package Width56.7
Package Height12
Package Length62.8
Supplier PackageEASY2B-1
Maximum Power Dissipation (mW)375000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)107
Maximum Gate Emitter Leakage Current (uA)0.1
Typical Collector Emitter Saturation Voltage (V)1.85
Description
Trans IGBT Module N-CH 1200V 107A 375000mW 35-Pin EASY2B-1 Tray
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