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FZ250R65KE3NPSA1
FZ250R65KE3NPSA1
IGBT Modules FZ250R65KE3NPSA1
Infineon
FZ250R65KE3NPSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSNot Compliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count5
AutomotiveUnknown
PCB changed5
Part StatusActive
Channel TypeN
ConfigurationSingle
Package Width73
Package Length140
Supplier PackageCase A-IHV73-6
Maximum Power Dissipation (mW)4800000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-50
Maximum Collector-Emitter Voltage (V)6500
Maximum Continuous Collector Current (A)250
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)3
Description
Trans IGBT Module N-CH 6500V 250A 4800000mW Automotive 5-Pin Case A-IHV73-6 Tray
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