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FZ800R12KL4CNOSA1
FZ800R12KL4CNOSA1
IGBT Modules FZ800R12KL4CNOSA1
Infineon
FZ800R12KL4CNOSA1
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Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count7
AutomotiveNo
PCB changed7
Part StatusObsolete
Channel TypeN
ConfigurationDual Common Emitter Common Gate
Package Width130
Package Height38
Package Length140
Supplier PackageIHM130-2
Maximum Power Dissipation (mW)5600000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)1300
Maximum Gate Emitter Leakage Current (uA)0.6
Typical Collector Emitter Saturation Voltage (V)2.1
Description
Trans IGBT Module N-CH 1200V 1.3KA 5600000mW 7-Pin IHM130-2 Tray
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