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HYBRIDKIT2ENHANCEDTOBO1
HYBRIDKIT2ENHANCEDTOBO1
IGBT Modules HYBRIDKIT2ENHANCEDTOBO1
Infineon
HYBRIDKIT2ENHANCEDTOBO1
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count33
AutomotiveYes
PCB changed33
Part StatusUnconfirmed
Channel TypeN
ConfigurationHex
Package Width100
Package Height28.5(Max)
Package Length216
Supplier PackageHYBRID2-1
Maximum Power Dissipation (mW)1500000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)700
Maximum Gate Emitter Leakage Current (uA)0.4
Typical Collector Emitter Saturation Voltage (V)1.3
Description
Trans IGBT Module N-CH 650V 700A 1500000mW Automotive 33-Pin HYBRID2-1 Tray
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