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VS-GT100DA120UF
VS-GT100DA120UF
IGBT Modules VS-GT100DA120UF
Vishay
VS-GT100DA120UF
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count4
AutomotiveNo
TechnologyTrench
PCB changed4
Part StatusActive
Channel TypeN
ConfigurationSingle Dual Emitter
Package Width25.7(Max)
Package Length38.3(Max)
Supplier PackageSOT-227
Maximum Power Dissipation (mW)890000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)187
Maximum Gate Emitter Leakage Current (uA)0.22
Description
Trans IGBT Module N-CH 1200V 187A 890000mW 4-Pin SOT-227
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