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2SJ268-DL-E
2SJ268-DL-E
MOSFETs 2SJ268-DL-E
onsemi
2SJ268-DL-E
--
Diodes, Transistors and Thyristors
MOSFETs
2SJ268-DL-E.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSSupplier Unconfirmed
ECCN (US)EAR99
AutomotiveNo
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Product CategoryPower MOSFET
Maximum IDSS (uA)100
Typical Fall Time (ns)250
Typical Rise Time (ns)35
Number of Elements per Chip1
Maximum Power Dissipation (mW)1650
Maximum Gate Source Voltage (V)±15
Typical Turn-On Delay Time (ns)18
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)350
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)18
Typical Input Capacitance @ Vds (pF)1900@20V
Maximum Drain Source Resistance (mOhm)80@10V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET P-CH 60V 18A
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