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2SJ661-DL-1E
2SJ661-DL-1E
MOSFETs 2SJ661-DL-1E
onsemi
2SJ661-DL-1E
--
Diodes, Transistors and Thyristors
MOSFETs
2SJ661-DL-1E.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width9.2
Package Height4.5
Package Length10
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)195
Typical Rise Time (ns)285
Number of Elements per Chip1
Maximum Power Dissipation (mW)1650
Typical Gate Charge @ 10V (nC)80
Typical Gate Charge @ Vgs (nC)80@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)33
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)295
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)38
Typical Input Capacitance @ Vds (pF)4360@20V
Maximum Drain Source Resistance (MOhm)39@10V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET P-CH Si 60V 38A 3-Pin(2+Tab) D2PAK T/R
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