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FDG6322C
FDG6322C
MOSFETs FDG6322C
onsemi
FDG6322C
--
Diodes, Transistors and Thyristors
MOSFETs
FDG6322C.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual
Package Width1.25
Package Height0.9
Package Length2
Product CategoryPower MOSFET
Supplier PackageSC-88
Process TechnologyDMOS
Standard Package NameSC
Typical Fall Time (ns)3.2@N Channel|35@P Channel
Typical Rise Time (ns)4.5@N Channel|8@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)300
Typical Gate Charge @ Vgs (nC)0.29@4.5V@N Channel|1.1@4.5V@P Channel
Maximum Gate Source Voltage (V)8
Typical Turn-On Delay Time (ns)5@N Channel|7@P Channel
Maximum Drain Source Voltage (V)25
Typical Turn-Off Delay Time (ns)4@N Channel|55@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.22@N Channel|0.41@P Channel
Typical Input Capacitance @ Vds (pF)9.5@10V@N Channel|62@10V@P Channel
Maximum Drain Source Resistance (mOhm)4000@4.5V@N Channel|1100@4.5V@P Channel
Description
Trans MOSFET N/P-CH 25V 0.22A/0.41A 6-Pin SC-88 T/R
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