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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIS892DN-T1-GE3
SIS892DN-T1-GE3
MOSFETs SIS892DN-T1-GE3
Vishay
SIS892DN-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIS892DN-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.05
Package Height1.07(Max)
Package Length3.05
Product CategoryPower MOSFET
Supplier PackagePowerPAK 1212
Process TechnologyTrenchFET
Standard Package NamePowerPAK 1212
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)8|9
Typical Rise Time (ns)11|13
Number of Elements per Chip1
Maximum Power Dissipation (mW)3700
Typical Gate Charge @ 10V (nC)14.2
Typical Gate Charge @ Vgs (nC)14.2@10V|6.7@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8|10
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)17|21
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8
Typical Input Capacitance @ Vds (pF)611@50V
Maximum Drain Source Resistance (mOhm)29@10V
Description
Trans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212 T/R
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