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APTM120DA30T1G
APTM120DA30T1G
MOSFETs APTM120DA30T1G
Microchip Technology
APTM120DA30T1G
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTube
Pin Count12
AutomotiveNo
PCB changed12
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width40.8
Package Height11.5
Package Length51.6
Product CategoryPower MOSFET
Supplier PackageCase SP-1
Typical Fall Time (ns)90
Typical Rise Time (ns)60
Number of Elements per Chip1
Maximum Power Dissipation (mW)657000
Typical Gate Charge @ 10V (nC)560
Typical Gate Charge @ Vgs (nC)560@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)100
Maximum Drain Source Voltage (V)1200
Typical Turn-Off Delay Time (ns)315
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)31
Typical Input Capacitance @ Vds (pF)14560@25V
Maximum Drain Source Resistance (MOhm)360@10V
Description
Trans MOSFET N-CH 1.2KV 31A 12-Pin Case SP-1 Tube
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