Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
Material | SiC |
ECCN (US) | EAR99 |
Packaging | Tube |
Automotive | No |
Part Status | NRND |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Hex |
Product Category | Power MOSFET |
Maximum IDSS (uA) | 300 |
Typical Fall Time (ns) | 70 |
Typical Rise Time (ns) | 40 |
Number of Elements per Chip | 6 |
Maximum Power Dissipation (mW) | 925000 |
Typical Gate Charge @ Vgs (nC) | 483@20V |
Maximum Gate Source Voltage (V) | 25 |
Typical Turn-On Delay Time (ns) | 35 |
Maximum Drain Source Voltage (V) | 1200 |
Typical Turn-Off Delay Time (ns) | 150 |
Maximum Gate Threshold Voltage (V) | 2.4(Typ) |
Maximum Operating Temperature (°C) | 100 |
Minimum Operating Temperature (°C) | -40 |
Maximum Continuous Drain Current (A) | 220 |
Typical Input Capacitance @ Vds (pF) | 8400@1000V |
Maximum Drain Source Resistance (MOhm) | 12@20V |
Maximum Gate Source Leakage Current (nA) | 1800 |
Description |