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MOSFETs APTMC120TAM12CTPAG
Microchip Technology
APTMC120TAM12CTPAG
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSiC
ECCN (US)EAR99
PackagingTube
AutomotiveNo
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationHex
Product CategoryPower MOSFET
Maximum IDSS (uA)300
Typical Fall Time (ns)70
Typical Rise Time (ns)40
Number of Elements per Chip6
Maximum Power Dissipation (mW)925000
Typical Gate Charge @ Vgs (nC)483@20V
Maximum Gate Source Voltage (V)25
Typical Turn-On Delay Time (ns)35
Maximum Drain Source Voltage (V)1200
Typical Turn-Off Delay Time (ns)150
Maximum Gate Threshold Voltage (V)2.4(Typ)
Maximum Operating Temperature (°C)100
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)220
Typical Input Capacitance @ Vds (pF)8400@1000V
Maximum Drain Source Resistance (MOhm)12@20V
Maximum Gate Source Leakage Current (nA)1800
Description
Trans MOSFET N-CH SiC 1.2KV 220A Tube
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