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MOSFETs BSL215CH6327XTSA1
Infineon
BSL215CH6327XTSA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P|N |
| Configuration | Dual |
| Package Width | 1.6 |
| Package Height | 1(Max) |
| Package Length | 2.9 |
| Product Category | Small Signal |
| Supplier Package | TSOP |
| Maximum IDSS (uA) | 1 |
| Process Technology | OptiMOS-P 2|OptiMOS 2 |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 14@P Channel|1.4@N Channel |
| Typical Rise Time (ns) | 9.7@P Channel|7.6@N Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 500 |
| Typical Gate Charge @ Vgs (nC) | 3@5V@P Channel|0.73@4.5V@N Channel |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Output Capacitance (pF) | 46@N Channel|110@P Channel |
| Typical Turn-On Delay Time (ns) | 6.7@P Channel|4.1@N Channel |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 14.5@P Channel|6.8@N Channel |
| Maximum Diode Forward Voltage (V) | 1.1 |
| Maximum Gate Threshold Voltage (V) | 0.6@P Channel|1.2@N Channel |
| Minimum Gate Threshold Voltage (V) | 0.7@N Channel|1.2@P Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 1.5 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 270@10V@P Channel|110@10V@N Channel |
| Maximum Drain Source Resistance (MOhm) | 150@4.5V@P Channel|140@4.5V@N Channel |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 12 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 6 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 250 |
| Description |
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