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MOSFETs BSS119N H6327
Infineon
BSS119N H6327
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 1.3 |
| Package Height | 1(Max) |
| Package Length | 2.9 |
| Product Category | Small Signal |
| Supplier Package | SOT-23 |
| Maximum IDSS (uA) | 0.01 |
| Process Technology | OptiMOS |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 18.8 |
| Typical Rise Time (ns) | 3.3 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 500 |
| Typical Gate Charge @ 10V (nC) | 0.6 |
| Typical Gate Charge @ Vgs (nC) | 0.6@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 3.4 |
| Typical Turn-On Delay Time (ns) | 2.7 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Gate Plateau Voltage (V) | 3.2 |
| Typical Turn-Off Delay Time (ns) | 7 |
| Maximum Diode Forward Voltage (V) | 1.1 |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Gate to Drain Charge (nC) | 0.25 |
| Maximum Gate Threshold Voltage (V) | 2.3 |
| Minimum Gate Threshold Voltage (V) | 1.3 |
| Typical Gate Threshold Voltage (V) | 1.9 |
| Typical Gate to Source Charge (nC) | 0.05 |
| Typical Reverse Recovery Time (ns) | 12 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.19 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 15.7@25V |
| Typical Reverse Recovery Charge (nC) | 5 |
| Maximum Drain Source Resistance (mOhm) | 6000@10V |
| Maximum Gate Source Leakage Current (nA) | 10 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 0.77 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.5 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 2.1@25V |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 250 |
| Description |
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