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MOSFETs BUK9E1R6-30E,127
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BUK9E1R6-30E,127
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | Unknown |
| EU RoHS | Compliant with Exemption |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Rail |
| Pin Count | 3 |
| Automotive | Yes |
| PCB changed | 3 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 4.5(Max) |
| Package Height | 9.4(Max) |
| Package Length | 10.3(Max) |
| Product Category | Power MOSFET |
| Supplier Package | I2PAK |
| Maximum IDSS (uA) | 1 |
| Process Technology | TMOS |
| Typical Fall Time (ns) | 111 |
| Typical Rise Time (ns) | 127 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 349000 |
| Typical Gate Charge @ Vgs (nC) | 113@5V |
| Maximum Gate Source Voltage (V) | 15 |
| Typical Turn-On Delay Time (ns) | 71 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 184 |
| Maximum Gate Threshold Voltage (V) | 0.5(Min) |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 120 |
| Typical Input Capacitance @ Vds (pF) | 12100@25V |
| Maximum Drain Source Resistance (mOhm) | 1.4@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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