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MOSFETs JANTXV2N6790U
Infineon
JANTXV2N6790U
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Not Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 18 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 18 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Hex Drain Octal Source Dual Gate |
| Package Width | 7.49(Max) |
| Package Height | 2.92(Max) |
| Package Length | 9.14(Max) |
| Product Category | Power MOSFET |
| Supplier Package | LLCC |
| Process Technology | HEXFET |
| Standard Package Name | LLCC |
| Typical Fall Time (ns) | 50(Max) |
| Typical Rise Time (ns) | 50(Max) |
| Supplier Temperature Grade | Military |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 14000 |
| Typical Gate Charge @ 10V (nC) | 14.3(Max) |
| Typical Gate Charge @ Vgs (nC) | 14.3(Max)@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 40(Max) |
| Maximum Drain Source Voltage (V) | 200 |
| Typical Turn-Off Delay Time (ns) | 50(Max) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 2.8 |
| Typical Input Capacitance @ Vds (pF) | 260@25V |
| Maximum Drain Source Resistance (mOhm) | 850@10V |
| Description |
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