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IPI65R150CFDXKSA1
IPI65R150CFDXKSA1
MOSFETs IPI65R150CFDXKSA1
Infineon
IPI65R150CFDXKSA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.57(Max)
Package Height9.45(Max)
Package Length10.36(Max)
Product CategoryPower MOSFET
Supplier PackageTO-262
Maximum IDSS (uA)1
Process TechnologyCoolMOS
Standard Package NameI2PAK
Typical Fall Time (ns)5.6
Typical Rise Time (ns)7.6
Number of Elements per Chip1
Maximum Power Dissipation (mW)195300
Typical Gate Charge @ 10V (nC)86
Typical Gate Charge @ Vgs (nC)86@10V
Maximum Gate Source Voltage (V)30
Typical Turn-On Delay Time (ns)12.4
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)52.8
Maximum Gate Threshold Voltage (V)4.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)22.4
Typical Input Capacitance @ Vds (pF)2340@100V
Maximum Drain Source Resistance (MOhm)150@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 650V 22.4A 3-Pin(3+Tab) TO-262 Tube
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