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MOSFETs DMN2019UTS-13
Diodes Incorporated
DMN2019UTS-13
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual Common Drain Dual Source |
| Package Width | 4.43 |
| Package Height | 0.93 |
| Package Length | 3.03 |
| Product Category | Power MOSFET |
| Supplier Package | TSSOP |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 234 |
| Typical Rise Time (ns) | 78 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 780 |
| Typical Gate Charge @ Vgs (nC) | 8.8@4.5V |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Turn-On Delay Time (ns) | 53 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 562 |
| Maximum Gate Threshold Voltage (V) | 0.95 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 5.4 |
| Typical Input Capacitance @ Vds (pF) | 143@10V |
| Maximum Drain Source Resistance (mOhm) | 18.5@10V |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Description |
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