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MOSFETs DMN21D2UFB-7
Diodes Incorporated
DMN21D2UFB-7
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Diodes, Transistors and Thyristors
MOSFETs
DMN21D2UFB-7.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1
Package Height0.47
Package Length0.6
Supplier PackageX1-DFN
Maximum IDSS (uA)0.1
Typical Fall Time (ns)9.8
Typical Rise Time (ns)4.2
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)900
Typical Gate Charge @ 10V (nC)0.41|0.93
Typical Gate Charge @ Vgs (nC)0.41@10V|0.93@10V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)3.5
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)19.6
Maximum Gate Threshold Voltage (V)1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.76
Typical Input Capacitance @ Vds (pF)27.6@16V
Maximum Drain Source Resistance (mOhm)990@4.5V
Maximum Gate Source Leakage Current (nA)1000
Description
Trans MOSFET N-CH 20V 0.76A T/R
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