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MOSFETs DMN3022LDG-7
Diodes Incorporated
DMN3022LDG-7
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Diodes, Transistors and Thyristors
MOSFETs
DMN3022LDG-7.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Product CategoryPower MOSFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)1.9
Typical Rise Time (ns)1.8
Number of Elements per Chip2
Maximum Power Dissipation (mW)1960
Typical Gate Charge @ Vgs (nC)2.8@4.5V
Maximum Gate Source Voltage (V)±10
Typical Turn-On Delay Time (ns)4.5
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)7.2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7.6
Typical Input Capacitance @ Vds (pF)370@15V
Maximum Drain Source Resistance (mOhm)22@5V
Description
Trans MOSFET N-CH 30V 7.6A T/R
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