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DMN6013LFG-7
DMN6013LFG-7
MOSFETs DMN6013LFG-7
Diodes Incorporated
DMN6013LFG-7
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Diodes, Transistors and Thyristors
MOSFETs
DMN6013LFG-7.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.3
Package Height0.78
Package Length3.3
Product CategoryPower MOSFET
Supplier PackagePowerDI EP
Maximum IDSS (uA)1
Typical Fall Time (ns)9.4
Typical Rise Time (ns)27.6
Number of Elements per Chip1
Maximum Power Dissipation (mW)40000
Typical Gate Charge @ 10V (nC)55.4
Typical Gate Charge @ Vgs (nC)26.6@4.5|55.4@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)9.9
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)11.7
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)10.3
Typical Input Capacitance @ Vds (pF)2577@30V
Maximum Drain Source Resistance (mOhm)13@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 60V 10.3A 8-Pin PowerDI EP T/R
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