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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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DMT30M9LPS-13
DMT30M9LPS-13
MOSFETs DMT30M9LPS-13
Diodes Incorporated
DMT30M9LPS-13
--
Diodes, Transistors and Thyristors
MOSFETs
DMT30M9LPS-13.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.8
Package Height0.98
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerDI EP
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)68
Typical Rise Time (ns)27.4
Number of Elements per Chip1
Maximum Power Dissipation (mW)125000
Typical Gate Charge @ 10V (nC)73
Typical Gate Charge @ Vgs (nC)73@10V|160@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7.5
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)135
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)320
Typical Input Capacitance @ Vds (pF)9900@20V
Maximum Drain Source Resistance (mOhm)0.9@10V
Description
Trans MOSFET N-CH 30V 320A 8-Pin PowerDI EP T/R | Diodes Incorporated’s DMT/DMTH MOSFETs feature state of the art shielded-gate technology, which provides a multitude of benefits for a variety of applications and designs.
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