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FCD380N60E
FCD380N60E
MOSFETs FCD380N60E
onsemi
FCD380N60E
--
Diodes, Transistors and Thyristors
MOSFETs
FCD380N60E.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)5
Process TechnologySuperFET II
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)10
Typical Rise Time (ns)9
Number of Elements per Chip1
Maximum Power Dissipation (mW)106000
Typical Gate Charge @ 10V (nC)34
Typical Gate Charge @ Vgs (nC)34@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)17
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)64
Maximum Gate Threshold Voltage (V)3.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)10.2
Typical Input Capacitance @ Vds (pF)1330@25V
Maximum Drain Source Resistance (mOhm)380@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) DPAK T/R
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