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FDD86367
FDD86367
MOSFETs FDD86367
onsemi
FDD86367
--
Diodes, Transistors and Thyristors
MOSFETs
FDD86367.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)16
Typical Rise Time (ns)49
Number of Elements per Chip1
Maximum Power Dissipation (mW)227000
Typical Gate Charge @ 10V (nC)68
Typical Gate Charge @ Vgs (nC)68@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)20
Maximum Drain Source Voltage (V)80
Typical Turn-Off Delay Time (ns)36
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)100
Typical Input Capacitance @ Vds (pF)4840@40V
Maximum Drain Source Resistance (mOhm)4.2@10V
Description
Trans MOSFET N-CH 80V 100A 3-Pin(2+Tab) DPAK T/R
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