Product Attribute | Attribute Value |
PPAP | No |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Material | Si |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
PCB changed | 8 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Dual |
Package Width | 6 |
Package Height | 1.05(Max) |
Package Length | 5 |
Product Category | Power MOSFET |
Supplier Package | PQFN EP |
Maximum IDSS (uA) | 1@Q 1|500@Q 2 |
Process Technology | TMOS |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 2.2@Q 1|3.4@Q 2 |
Typical Rise Time (ns) | 2.5@Q 1|5.5@Q 2 |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 2200@Q 1|2500@Q 2 |
Typical Gate Charge @ 10V (nC) | 21@Q 1|59@Q 2 |
Typical Gate Charge @ Vgs (nC) | 21@10V|10@4.5V@Q 1|59@10V|27@4.5V@Q 2 |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 8.3@Q 1|15@Q 2 |
Maximum Drain Source Voltage (V) | 30 |
Typical Turn-Off Delay Time (ns) | 20@Q 1|36@Q 2 |
Maximum Gate Threshold Voltage (V) | 2.7@Q 1|3@Q 2 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 13@Q 1|27@Q 2 |
Typical Input Capacitance @ Vds (pF) | 1340@15V@Q 1|4346@15V@Q 2 |
Maximum Drain Source Resistance (mOhm) | 8@10V@Q 1|1.9@10V@Q 2 |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |