Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
Material | Si |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Automotive | No |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Dual |
Product Category | Power MOSFET |
Typical Fall Time (ns) | 3 |
Typical Rise Time (ns) | 3 |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 2500@Q 2|2200@Q 1 |
Typical Gate Charge @ 10V (nC) | 16@Q 1|19@Q 2 |
Typical Gate Charge @ Vgs (nC) | 8@5V@Q 1|16@10V|19@10V|10@5V@Q 2 |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 6@Q 2|7@Q 1 |
Maximum Drain Source Voltage (V) | 30 |
Typical Turn-Off Delay Time (ns) | 18@Q 1|19@Q 2 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 11.5@Q 1|12@Q 2 |
Typical Input Capacitance @ Vds (pF) | 947@15V@Q 2|1050@15V@Q 1 |
Maximum Drain Source Resistance (mOhm) | 11.6@10V@Q 2|12@10V@Q 1 |
Description |