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FDMS7678
FDMS7678
MOSFETs FDMS7678
onsemi
FDMS7678
--
Diodes, Transistors and Thyristors
MOSFETs
FDMS7678.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.85(Max)
Package Height1.05(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackagePQFN EP
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameQFN
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)3
Typical Rise Time (ns)4
Number of Elements per Chip1
Maximum Power Dissipation (mW)2300
Typical Gate Charge @ 10V (nC)28
Typical Gate Charge @ Vgs (nC)28@10V|14@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)26
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)17.5
Typical Input Capacitance @ Vds (pF)1810@15V
Maximum Drain Source Resistance (MOhm)5.5@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 17.5A 8-Pin PQFN EP T/R
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