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FDS8962C
FDS8962C
MOSFETs FDS8962C
onsemi
FDS8962C
--
Diodes, Transistors and Thyristors
MOSFETs
FDS8962C.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Dual Drain
Package Width3.9
Package Height1.65(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackageSOIC N
Standard Package NameSOP
Typical Fall Time (ns)3@N Channel|9@P Channel
Typical Rise Time (ns)5@N Channel|13@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)10.7@N Channel|9.6@P Channel
Typical Gate Charge @ Vgs (nC)10.7@10V@N Channel|9.6@10V@P Channel
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8@N Channel|7@P Channel
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)23@N Channel|14@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7@N Channel|5@P Channel
Typical Input Capacitance @ Vds (pF)575@15V@N Channel|528@15V@P Channel
Maximum Drain Source Resistance (MOhm)30@10V@N Channel|52@10V@P Channel
Description
Trans MOSFET N/P-CH 30V 7A/5A 8-Pin SOIC N T/R
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