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MOSFETs FDV301N-NB9V003
onsemi
FDV301N-NB9V003
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 1.3 |
| Package Height | 0.94 |
| Package Length | 2.9 |
| Product Category | Power MOSFET |
| Supplier Package | SOT-23 |
| Maximum IDSS (uA) | 1 |
| Process Technology | DMOS |
| Typical Fall Time (ns) | 3.5 |
| Typical Rise Time (ns) | 6 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 350 |
| Typical Gate Charge @ Vgs (nC) | 0.49@4.5V |
| Maximum Gate Source Voltage (V) | 8 |
| Typical Turn-On Delay Time (ns) | 3.2 |
| Maximum Drain Source Voltage (V) | 25 |
| Typical Turn-Off Delay Time (ns) | 3.5 |
| Maximum Gate Threshold Voltage (V) | 1.06 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.22 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 9.5@10V |
| Maximum Drain Source Resistance (mOhm) | 4000@4.5V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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