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FQU13N10LTU
FQU13N10LTU
MOSFETs FQU13N10LTU
onsemi
FQU13N10LTU
--
Diodes, Transistors and Thyristors
MOSFETs
FQU13N10LTU.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusLTB
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width2.3
Package Height6.1
Package Length6.6
Product CategoryPower MOSFET
Supplier PackageIPAK
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameTO-251
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)72
Typical Rise Time (ns)220
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)8.7@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7.5
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)22
Maximum Gate Threshold Voltage (V)2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)10
Typical Input Capacitance @ Vds (pF)400@25V
Maximum Drain Source Resistance (mOhm)180@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) IPAK Tube
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