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FQB19N20TM
FQB19N20TM
MOSFETs FQB19N20TM
onsemi
FQB19N20TM
--
Diodes, Transistors and Thyristors
MOSFETs
FQB19N20TM.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)80
Typical Rise Time (ns)190
Number of Elements per Chip1
Maximum Power Dissipation (mW)3130
Typical Gate Charge @ 10V (nC)31
Typical Gate Charge @ Vgs (nC)31@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)20
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)55
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)19.4
Typical Input Capacitance @ Vds (pF)1220@25V
Maximum Drain Source Resistance (MOhm)150@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R
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