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HUF76609D3ST
HUF76609D3ST
MOSFETs HUF76609D3ST
onsemi
HUF76609D3ST
--
Diodes, Transistors and Thyristors
MOSFETs
HUF76609D3ST.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyUltraFET
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)28|39
Typical Rise Time (ns)41|18
Number of Elements per Chip1
Maximum Power Dissipation (mW)49000
Typical Gate Charge @ 10V (nC)13
Typical Gate Charge @ Vgs (nC)13@10V
Maximum Gate Source Voltage (V)±16
Typical Turn-On Delay Time (ns)6|10
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)30|55
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)10
Typical Input Capacitance @ Vds (pF)425@25V
Maximum Drain Source Resistance (mOhm)160@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) DPAK T/R
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