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IPB60R099C6
IPB60R099C6
MOSFETs IPB60R099C6
Infineon
IPB60R099C6
--
Diodes, Transistors and Thyristors
MOSFETs
IPB60R099C6.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.45(Max)
Package Height4.57(Max)
Package Length10.31(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Process TechnologyCoolMOS
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)6
Typical Rise Time (ns)12
Number of Elements per Chip1
Maximum Power Dissipation (mW)278000
Typical Gate Charge @ 10V (nC)119
Typical Gate Charge @ Vgs (nC)119@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)75
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)37.9
Typical Input Capacitance @ Vds (pF)2660@100V
Maximum Drain Source Resistance (mOhm)99@10V
Description
Trans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) D2PAK T/R
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