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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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IPD65R1K4CFDATMA1
IPD65R1K4CFDATMA1
MOSFETs IPD65R1K4CFDATMA1
Infineon
IPD65R1K4CFDATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
IPD65R1K4CFDATMA1.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed2
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.41(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyCoolMOS CFD2
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)18.2
Typical Rise Time (ns)6
Number of Elements per Chip1
Maximum Power Dissipation (mW)28400
Typical Gate Charge @ 10V (nC)10
Typical Gate Charge @ Vgs (nC)10@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)8
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)33
Maximum Gate Threshold Voltage (V)4.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.8
Typical Input Capacitance @ Vds (pF)262@100V
Maximum Drain Source Resistance (MOhm)1400@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Pulsed Drain Current @ TC=25°C (A)8.2
Description
Trans MOSFET N-CH 650V 2.8A Automotive 3-Pin(2+Tab) DPAK T/R
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