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IPP111N15N3G
IPP111N15N3G
MOSFETs IPP111N15N3G
Infineon
IPP111N15N3G
--
Diodes, Transistors and Thyristors
MOSFETs
IPP111N15N3G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveUnknown
Lead ShapeThrough Hole
PCB changed3
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.57(Max)
Package Height9.45(Max)
Package Length10.36(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220
Process TechnologyOptiMOS
Standard Package NameTO-220
Typical Fall Time (ns)9
Typical Rise Time (ns)35
Number of Elements per Chip1
Maximum Power Dissipation (mW)214000
Typical Gate Charge @ 10V (nC)41
Typical Gate Charge @ Vgs (nC)41@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)17
Maximum Drain Source Voltage (V)150
Typical Turn-Off Delay Time (ns)32
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)83
Typical Input Capacitance @ Vds (pF)3230@75V
Maximum Drain Source Resistance (mOhm)11.1@10V
Description
Trans MOSFET N-CH 150V 83A Automotive 3-Pin(3+Tab) TO-220 Tube
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