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IRF135S203
IRF135S203
MOSFETs IRF135S203
Infineon
IRF135S203
--
Diodes, Transistors and Thyristors
MOSFETs
IRF135S203.pdf
Specification
Product AttributeAttribute Value
HTS8542.31.00.01
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.25
Package Height4.4
Package Length10
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)20
Process TechnologyHEXFET
Standard Package NameTO-263
Typical Fall Time (ns)81
Typical Rise Time (ns)73
Number of Elements per Chip1
Maximum Power Dissipation (mW)441000
Typical Gate Charge @ 10V (nC)180
Typical Gate Charge @ Vgs (nC)180@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)18
Maximum Drain Source Voltage (V)135
Typical Turn-Off Delay Time (ns)114
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)129
Typical Input Capacitance @ Vds (pF)9700@50V
Maximum Drain Source Resistance (MOhm)8.4@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH Si 135V 129A 3-Pin(2+Tab) D2PAK T/R
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