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IRF3711PBF
IRF3711PBF
MOSFETs IRF3711PBF
Infineon
IRF3711PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF3711PBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.02(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Process TechnologyHEXFET
Standard Package NameTO-220
Typical Fall Time (ns)12
Typical Rise Time (ns)220
Number of Elements per Chip1
Maximum Power Dissipation (mW)3100
Typical Gate Charge @ Vgs (nC)29@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)17
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)110
Typical Input Capacitance @ Vds (pF)2980@10V
Maximum Drain Source Resistance (mOhm)6@10V
Description
Trans MOSFET N-CH 20V 110A 3-Pin(3+Tab) TO-220AB Tube
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